Technical Data: Ultra-Low Loss Gallium Oxide Schottky Barrier Diode
We will advance the high current drive of the developed device and aim for commercialization starting in the fiscal year 2021.
This technical document covers the "Ultra-Low Loss Gallium Oxide Schottky Barrier Diode." Our company has successfully reduced forward loss by up to 40% compared to commercially available SiC Schottky diodes. We are advancing the development of high-current drive devices, aiming for commercialization starting in the fiscal year 2021. We also introduce the "Gallium Oxide Trench MOSFET." [Contents] ■ Ultra-Low Loss Gallium Oxide Schottky Barrier Diode ■ Gallium Oxide Trench MOSFET *For more details, please refer to the PDF document or feel free to contact us.
- Company：ノベルクリスタルテクノロジー 本社
- Price：Other
